Optoelectronic Artificial Synapses Based on Two-Dimensional Transitional-Metal Trichalcogenide
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Artificial Optoelectronic Synapses Based on TiN x O 2– x /MoS 2 Heterojunction for Neuromorphic Computing and Visual System
Optoelectronic synapse using monolayer MoS2 field effect transistors
Advanced Functional Materials: Vol 33, No 9
Nanostructured Materials and Architectures for Advanced Optoelectronic Synaptic Devices
유연인쇄전자학술지(Journal of Flexible and Printed Electronics)
Quasi-One-Dimensional van der Waals Transition Metal Trichalcogenides
Quasi-One-Dimensional van der Waals Transition Metal Trichalcogenides
High-performance synaptic transistors for neuromorphic computing
Materials, Free Full-Text
Electronics, Free Full-Text
Materials, Free Full-Text
Artificial optoelectronic synaptic devices based on vertical organic field-effect transistors with low energy consumption
Quasi-One-Dimensional van der Waals Transition Metal Trichalcogenides
